NGTB75N65FL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
www.onsemi.com
• Extremely Efficient Trench with Field Stop Technology
• T
= 175°C
Jmax
75 A, 650 V
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
VCEsat = 1.70 V
EOFF = 1.0 mJ
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
650
Collector current
@ TC = 25°C
A
100
75
@ TC = 100°C
Diode Forward Current
@ TC = 25°C
I
F
A
G
TO−247
CASE 340AL
100
75
C
@ TC = 100°C
E
Diode Pulsed Current
I
200
200
5
A
A
FM
T
Limited by T Max
PULSE
J
MARKING DIAGRAM
Pulsed collector current, T
I
pulse
CM
limited by T
Jmax
Short−circuit withstand time
= 15 V, V = 400 V,
t
ms
SC
V
GE
CE
T ≤ +150°C
J
Gate−emitter voltage
VGE
$20
$30
V
V
75N65FL2
AYWWG
Transient gate−emitter voltage
(T
PULSE
= 5 ms, D < 0.10)
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
595
265
Operating junction temperature
range
T
−55 to +175
°C
J
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Storage temperature range
T
stg
−55 to +175
260
°C
°C
= Pb−Free Package
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NGTB75N65FL2WG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2016 − Rev. 5
NGTB75N65FL2W/D