Datasheet > NGTD13R120F2WP

NGTD13R120F2WP

更新时间： 2024-02-20 18:40:06

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	88K
描述
Fast Switching Rectifier Die

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NGTD13R120F2WP 数据手册

NGTD13R120F2

Fast Switching Rectifier Die

Fast switching low Vf rectifier die for free−wheeling applications.

Features

• Fast Switching

• Low Vf

www.onsemi.com

Typical Applications

• Industrial Motor Control

• Solar PV Inverters

V_RRM= 1200 V

I_F= Limited by T_J(max)

MAXIMUM RATINGS

Parameter

Symbol

Value

1200

Unit

DIODE DIE

Peak Reverse Voltage

RRM

Max Forward Conduction Current

Maximum Junction Temperature

(Note 1)

175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Depending on thermal properties of assembly.

MECHANICAL DATA

Parameter

Value

4009 x 3009

5.5

Unit

Die Size

DIE OUTLINE

Die Thickness

mils

Wafer Size

150

Top Pad Size (Anode)

Top Metal (Anode)

Back Metal (Cathode)

Max possible chips per wafer

Passivation frontside

Reject ink dot size

3316 x 2321

4 mm AlSi

2 mm TiNiAg

1000

Oxide−Nitride

25 mils

Recommended storage environment:

In original container, in dry nitrogen,

or temperature of 18−28°C,

30−65%RH

Type: Bare

Wafer in Jar

Storage time:

< 36 months

Type: Die on

tape in

ring−pack

Storage time:

< 3 months

ORDERING INFORMATION

Device

NGTD13R120F2WP

NGTD13R120F2SWK

Inking?

Shipping

Yes

Bare Wafer in Jar

Sawn Wafer on Tape

Publication Order Number:

NGTD13R120F2WP/D

March, 2016 − Rev. 0

12 3

中文翻译

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