Datasheet > NGTD13T120F2WP

NGTD13T120F2WP

更新时间： 2024-10-02 01:13:19

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
3页	92K
描述
IGBT Die

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NGTD13T120F2WP 数据手册

NGTD13T120F2

IGBT Die

Trench Field Stop II IGBT Die for motor drive and inverter

applications.

Features

• Extremely Efficient Trench with Field Stop Technology

• Low V

Loss Reduces System Power Dissipation

www.onsemi.com

CE(sat)

Typical Applications

• Industrial Motor Drives

• Solar Inverters

• UPS Systems

V_RCE= 1200 V

I_C= Limited by T_J(max)

• Welding

MAXIMUM RATINGS

IGBT DIE

Parameter

Symbol

Value

1200

Unit

Collector−Emitter Voltage, T = 25°C

DC Collector Current, limited by

(Note 1)

J(max)

Pulsed Collector Current (Note 2)

Gate−Emitter Voltage

C, pulse

Maximum Junction Temperature

Short Circuit Withstand Time,

−55 to +175

°C

= 15 V, V = 500V, T ≤ 150°C

CE J

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

DIE OUTLINE

1. Depending on thermal properties of assembly.

2. T

limited by T , 10 ms pulse, V = 15 V.

jmax GE

pulse

MECHANICAL DATA

Parameter

Die Size

Value

3476 x 3580

See die layout

405 x 670

Unit

Emitter Pad Size

Gate Pad Size

Die Thickness

mils

Wafer Size

150

Top Metal

5 mm AlSi

Back Metal

2 mm TiNiAg

766

Max possible chips per wafer

Passivation frontside

Reject ink dot size

Oxide−Nitride

25 mils

Recommended storage environment:

In original container, in dry nitrogen,

or temperature of 18−28°C,

30−65%RH

Type: Bare

Wafer in Jar

Storage time:

< 36 months

Type: Die on

tape in

ring−pack

Storage time:

< 3 months

ORDERING INFORMATION

Device

NGTD13T120F2WP

NGTD13T120F2SWK

Inking?

Shipping

Yes

Bare Wafer in Jar

Sawn Wafer on Tape

Publication Order Number:

NGTD13T120F2WP/D

March, 2016 − Rev. 0

12 3

中文翻译

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