5秒后页面跳转
NGTB75N60FL2WG_16 PDF预览

NGTB75N60FL2WG_16

更新时间: 2024-01-29 14:36:50
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 245K
描述
IGBT

NGTB75N60FL2WG_16 数据手册

 浏览型号NGTB75N60FL2WG_16的Datasheet PDF文件第2页浏览型号NGTB75N60FL2WG_16的Datasheet PDF文件第3页浏览型号NGTB75N60FL2WG_16的Datasheet PDF文件第4页浏览型号NGTB75N60FL2WG_16的Datasheet PDF文件第5页浏览型号NGTB75N60FL2WG_16的Datasheet PDF文件第6页浏览型号NGTB75N60FL2WG_16的Datasheet PDF文件第7页 
NGTB75N60FL2WG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on state voltage and minimal switching loss.  
Features  
www.onsemi.com  
Extremely Efficient Trench with Field Stop Technology  
T  
= 175°C  
Jmax  
75 A, 600 V  
CEsat = 1.70 V  
EOFF = 1.0 mJ  
Soft Fast Reverse Recovery Diode  
Optimized for High Speed Switching  
5 ms Short−Circuit Capability  
These are Pb−Free Devices  
V
C
Typical Applications  
Solar Inverters  
Uninterruptible Power Supplies (UPS)  
Welding  
G
ABSOLUTE MAXIMUM RATINGS  
E
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
600  
Collector current  
@ TC = 25°C  
A
100  
75  
@ TC = 100°C  
TO−247  
CASE 340AL  
Diode Forward Current  
@ TC = 25°C  
I
F
A
G
100  
75  
C
E
@ TC = 100°C  
Diode Pulsed Current  
I
200  
200  
5
A
A
FM  
T
Limited by T Max  
PULSE  
J
MARKING DIAGRAM  
Pulsed collector current, T  
I
pulse  
CM  
limited by T  
Jmax  
Short−circuit withstand time  
= 15 V, V = 400 V,  
t
ms  
SC  
V
GE  
CE  
T +150°C  
J
75N60FL2  
AYWWG  
Gate−emitter voltage  
VGE  
$20  
$30  
V
V
Transient gate−emitter voltage  
(T  
PULSE  
= 5 ms, D < 0.10)  
Power Dissipation  
PD  
W
@ TC = 25°C  
@ TC = 100°C  
595  
265  
Operating junction temperature  
range  
T
J
−55 to +175  
°C  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Storage temperature range  
T
−55 to +175  
260  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
NGTB75N60FL2WG  
Package  
Shipping  
30 Units / Rail  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
September, 2016 − Rev. 5  
NGTB75N60FL2W/D  

与NGTB75N60FL2WG_16相关器件

型号 品牌 获取价格 描述 数据表
NGTB75N60SWG ONSEMI

获取价格

IGBT 600V/75A - Welding
NGTB75N65FL2WAG ONSEMI

获取价格

IGBT - Field Stop II / 4 Lead
NGTB75N65FL2WAG_16 ONSEMI

获取价格

IGBT - Field Stop II / 4 Lead
NGTB75N65FL2WG ONSEMI

获取价格

IGBT
NGTB75N65FL2WG_16 ONSEMI

获取价格

IGBT
NGTC1812N201TR1F NIC

获取价格

Surface Mount Gas Discharge Tube
NGTC1812N301TR1F NIC

获取价格

Surface Mount Gas Discharge Tube
NGTC1812N401TR1F NIC

获取价格

Surface Mount Gas Discharge Tube
NGTC1812N601TR1F NIC

获取价格

Surface Mount Gas Discharge Tube
NGTD13R120F2 ONSEMI

获取价格

Fast Switching Rectifier Die