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NGTB45N60S2WG PDF预览

NGTB45N60S2WG

更新时间： 2023-09-03 20:33:18
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
6页 149K
描述
IGBT，600 V/45 A - 焊接

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中文翻译

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NGTB45N60S2WG 数据手册

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NGTB45N60S2WG  
IGBT - Inverter Welding  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Trench construction, and provides superior performance  
in demanding switching applications, offering both low on state  
voltage and minimal switching loss. The IGBT is well suited for  
welding applications. Incorporated into the device is a soft and fast  
co−packaged free wheeling diode with a low forward voltage.  
www.onsemi.com  
Features  
45 A, 600 V  
• Low Switching Loss Reduces System Power Dissipation  
V
CEsat = 2.0 V  
• T  
= 175°C  
Jmax  
Eoff = 0.36 mJ  
• Soft, Fast Free Wheeling Diode  
• This is a Pb−Free Device  
C
Typical Applications  
• Welding  
G
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
E
Collector−emitter voltage  
VCES  
IC  
600  
V
A
Collector current  
@ TC = 25°C  
90  
45  
@ TC = 100°C  
Pulsed collector current, T  
ICM  
IF  
180  
A
A
pulse  
limited by T  
Jmax  
G
TO−247  
CASE 340AL  
Diode forward current  
@ TC = 25°C  
C
90  
45  
E
@ TC = 100°C  
Diode pulsed current, T  
limited  
IFM  
180  
A
V
pulse  
by T  
Jmax  
MARKING DIAGRAM  
Gate−emitter voltage  
Transient Gate Emitter Voltage  
(t = 5 ms, D < 0.010)  
p
VGE  
$20  
$30  
Power Dissipation  
@ TC = 25°C  
PD  
W
300  
150  
@ TC = 100°C  
45N60S2  
AYWWG  
Operating junction temperature  
range  
T
J
−55 to +175  
°C  
Storage temperature range  
T
−55 to +175  
260  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
NGTB45N60S2WG  
Package  
Shipping  
TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
December, 2014 − Rev. 1  
NGTB45N60S2W/D  
123456

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NGTB45N60S2WG 替代型号

型号 品牌 替代类型 描述 数据表
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