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NGTB50N60SWG

更新时间： 2023-09-03 20:34:53
品牌 Logo 应用领域
安森美 - ONSEMI 栅双极性晶体管
页数 文件大小 规格书
11页 207K
描述
IGBT 600V 50A Welding

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中文翻译

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NGTB50N60SWG 技术参数

是否无铅： 不含铅生命周期：Not Recommended
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：24 weeks
风险等级：8.5最大集电极电流 (IC)：100 A
集电极-发射极最大电压：600 V门极发射器阈值电压最大值：6.5 V
门极-发射极最大电压：20 VJESD-609代码：e3
最高工作温度：150 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NGTB50N60SWG 数据手册

 浏览型号NGTB50N60SWG的Datasheet PDF文件第2页浏览型号NGTB50N60SWG的Datasheet PDF文件第3页浏览型号NGTB50N60SWG的Datasheet PDF文件第4页浏览型号NGTB50N60SWG的Datasheet PDF文件第5页浏览型号NGTB50N60SWG的Datasheet PDF文件第6页浏览型号NGTB50N60SWG的Datasheet PDF文件第7页 
NGTB50N60SWG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on state voltage and minimal switching loss. The IGBT is  
well suited for half bridge resonant applications. Incorporated into the  
device is a soft and fast co−packaged free wheeling diode with a low  
forward voltage.  
www.onsemi.com  
50 A, 600 V  
Features  
V
CEsat = 2.4 V  
• Low Saturation Voltage using Trench with Fieldstop Technology  
• Low Switching Loss Reduces System Power Dissipation  
• Low Gate Charge  
• Soft, Fast Free Wheeling Diode  
• This is a Pb−Free Device  
Eoff = 0.60 mJ  
C
Typical Applications  
• Inductive Heating  
• Soft Switching  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−emitter voltage  
VCES  
IC  
600  
V
A
Collector current  
@ TC = 25°C  
100  
50  
@ TC = 100°C  
G
TO−247  
CASE 340AL  
Pulsed collector current, T  
ICM  
IF  
200  
A
A
C
pulse  
E
limited by T  
Jmax  
Diode forward current  
@ TC = 25°C  
100  
50  
@ TC = 100°C  
MARKING DIAGRAM  
Diode pulsed current, T  
limited  
IFM  
200  
A
pulse  
by T  
Jmax  
Gate−emitter voltage  
VGE  
PD  
$20  
V
Power Dissipation  
W
@ TC = 25°C  
@ TC = 100°C  
50N60SW  
AYWWG  
Operating junction temperature  
range  
T
J
−55 to +150  
°C  
Storage temperature range  
T
−55 to +150  
260  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
NGTB50N60SWG  
Package  
Shipping  
30 Units / Rail  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
September, 2016 − Rev. 1  
NGTB50N60SW/D  
1234567...11

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