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NGTB50N65S1WG PDF预览

NGTB50N65S1WG

更新时间: 2023-09-03 20:34:35
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 224K
描述
IGBT,FSII,650V,50A

NGTB50N65S1WG 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:,Reach Compliance Code:compliant
风险等级:6.75JESD-609代码:e3
端子面层:Tin (Sn)Base Number Matches:1

NGTB50N65S1WG 数据手册

 浏览型号NGTB50N65S1WG的Datasheet PDF文件第2页浏览型号NGTB50N65S1WG的Datasheet PDF文件第3页浏览型号NGTB50N65S1WG的Datasheet PDF文件第4页浏览型号NGTB50N65S1WG的Datasheet PDF文件第5页浏览型号NGTB50N65S1WG的Datasheet PDF文件第6页浏览型号NGTB50N65S1WG的Datasheet PDF文件第7页 
NGTB50N65S1WG  
Product Preview  
IGBT - Inverter Welding  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Trench construction, and provides superior performance  
in demanding switching applications, offering both low on state  
voltage and minimal switching loss. The IGBT is well suited for  
welding applications. Incorporated into the device is a soft and fast  
co−packaged free wheeling diode with a low forward voltage.  
www.onsemi.com  
50 A, 650 V  
Features  
VCEsat = 2.1 V  
T  
= 175°C  
Jmax  
EOFF = 0.53 mJ  
Soft Fast Reverse Recovery Diode  
Optimized for High Speed Switching  
These are Pb−Free Devices  
C
Typical Applications  
Welding  
G
ABSOLUTE MAXIMUM RATINGS  
E
Rating  
Symbol  
V
Value  
Unit  
V
Collector−emitter voltage  
650  
CES  
Collector current  
@ TC = 25°C  
I
C
A
140  
50  
@ TC = 100°C  
Diode Forward Current  
@ TC = 25°C  
I
A
F
TO−247  
CASE 340AL  
140  
50  
G
@ TC = 100°C  
C
E
Diode Pulsed Current  
I
140  
A
A
FM  
T
Limited by T Max  
PULSE  
J
MARKING DIAGRAM  
Pulsed collector current, T  
I
140  
pulse  
CM  
limited by T  
Jmax  
V
GE  
V
V
Gate−emitter voltage  
Transient gate−emitter voltage  
$20  
$30  
(T = 5 ms, D < 0.10)  
PULSE  
50N65S1  
AYWWG  
Power Dissipation  
P
D
W
@ TC = 25°C  
@ TC = 100°C  
300  
150  
Operating junction temperature range  
Storage temperature range  
T
−55 to +175  
−55 to +175  
260  
°C  
°C  
°C  
J
T
stg  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
= Pb−Free Package  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
ORDERING INFORMATION  
Device  
NGTB50N65S1WG  
Package  
Shipping  
30 Units / Rail  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2016 − Rev. P0  
NGTB50N65S1W/D  

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