Datasheet > NGTB50N65FL2WG_16

NGTB50N65FL2WG_16

更新时间： 2024-02-19 01:36:42

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
11页	217K
描述
IGBT - Field Stop II

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中文翻译

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NGTB50N65FL2WG_16 数据手册

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NGTB50N65FL2WG

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop II Trench construction, and provides superior

performance in demanding switching applications, offering both low

on state voltage and minimal switching loss. The IGBT is well suited

for UPS and solar applications. Incorporated into the device is a soft

and fast co−packaged free wheeling diode with a low forward voltage.

www.onsemi.com

Features

50 A, 650 V

_CEsat= 1.80 V

E_OFF= 0.46 mJ

• Extremely Efficient Trench with Field Stop Technology

• T

= 175°C

Jmax

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5 ms Short−Circuit Capability

• This is a Pb−Free Device

Typical Applications

• Solar Inverters

• Uninterruptible Power Supplies (UPS)

• Welding

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

V_CES

I_C

Value

Unit

Collector−emitter voltage

650

Collector current

@ TC = 25°C

TO−247

CASE 340AL

100

@ TC = 100°C

Diode Forward Current

@ TC = 25°C

100

@ TC = 100°C

MARKING DIAGRAM

Diode Pulsed Current

200

Limited by T Max

PULSE

Pulsed collector current, T

pulse

limited by T

Jmax

Short−circuit withstand time

= 15 V, V = 400 V,

50N65FL2

AYWWG

T ≤ +150°C

Gate−emitter voltage

V_GE

$20

$30

Transient gate−emitter voltage

PULSE

= 5 ms, D < 0.10)

Power Dissipation

P_D

@ TC = 25°C

@ TC = 100°C

417

208

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Operating junction temperature

range

−55 to +175

°C

Storage temperature range

−55 to +175

260

°C

stg

ORDERING INFORMATION

Lead temperature for soldering, 1/8”

from case for 5 seconds

SLD

Device

NGTB50N65FL2WG

Package

Shipping

30 Units / Rail

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

TO−247

(Pb−Free)

Publication Order Number:

September, 2016 − Rev. 5

NGTB50N65FL2W/D

12 3 4 5 6 7...11

中文翻译

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