Datasheet > NGTB50N60L2WG

NGTB50N60L2WG

更新时间： 2023-09-03 20:40:28

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
12页	373K
描述
IGBT 600V 50A FS2 低饱和压

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中文翻译

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技术参数
数据手册

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NGTB50N60L2WG 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	17 weeks	风险等级：	5.73
JESD-609代码：	e3	端子面层：	Tin (Sn)
Base Number Matches：	1

NGTB50N60L2WG 数据手册

DATA SHEET

www.onsemi.com

IGBT

50 A, 600 V

V_CEsat= 1.50 V

E_off= 0.6 mJ

NGTB50N60L2WG

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on state voltage and minimal switching loss.

Features

• Extremely Efficient Trench with Field Stop Technology

• T

= 175°C

Jmax

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5 ms Short−Circuit Capability

• These are Pb−Free Devices

Typical Applications

• Motor Drive Inverters

• Industrial Switching

• Welding

TO−247

CASE 340AM

ABSOLUTE MAXIMUM RATINGS

Rating

Collector−emitter Voltage

Collector Current

Symbol

Value

Unit

MARKING DIAGRAM

600

CES

@ T = 25°C

100

@ T = 100°C

50N60L2

AYWWG

Diode Forward Current

@ T = 25°C

100

@ T = 100°C

Diode Pulsed Current

200

Limited by T Max

PULSE

Pulsed Collector Current, T

pulse

Limited by T

Jmax

50N60L2 = Specific Device Code

Short−circuit Withstand Time

= Assembly Location

= Year

= 15 V, V = 400 V,

T ≤ +150°C

= Work Week

= Pb−Free Package

Gate−emitter Voltage

Transient Gate−emitter Voltage

PULSE

= 5 ms, D < 0.10)

ORDERING INFORMATION

Power Dissipation

@ T = 25°C

500

250

Device

NGTB50N60L2WG

Package

Shipping

30 Units / Rail

@ T = 100°C

TO−247

Operating Junction Temperature

Range

−55 to +175

°C

(Pb−Free)

Storage Temperature Range

−55 to +175

°C

stg

Lead temperature for soldering, 1/8″

from case for 5 seconds

SLD

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

October, 2021 − Rev. 5

NGTB50N60L2W/D

12 3 4 5 6 7...12

中文翻译

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