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NGTB50N60S1WG PDF预览

NGTB50N60S1WG

更新时间： 2023-09-03 20:38:37
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
6页 151K
描述
IGBT，600 V/50A - 焊接

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中文翻译

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NGTB50N60S1WG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.7JESD-609代码：e3
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NGTB50N60S1WG 数据手册

 浏览型号NGTB50N60S1WG的Datasheet PDF文件第2页浏览型号NGTB50N60S1WG的Datasheet PDF文件第3页浏览型号NGTB50N60S1WG的Datasheet PDF文件第4页浏览型号NGTB50N60S1WG的Datasheet PDF文件第5页浏览型号NGTB50N60S1WG的Datasheet PDF文件第6页 
NGTB50N60S1WG  
IGBT - Inverter Welding  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Trench construction, and provides superior performance  
in demanding switching applications, offering both low on state  
voltage and minimal switching loss. The IGBT is well suited for  
welding applications. Incorporated into the device is a soft and fast  
co−packaged free wheeling diode with a low forward voltage.  
www.onsemi.com  
Features  
50 A, 600 V  
CEsat = 1.80 V  
EOFF = 0.46 mJ  
• T  
= 175°C  
Jmax  
V
• Soft Fast Reverse Recovery Diode  
• Optimized for High Speed Switching  
• 5 ms Short−Circuit Capability  
• This is a Pb−Free Device  
C
Typical Applications  
• Welding  
G
ABSOLUTE MAXIMUM RATINGS  
E
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
600  
Collector current  
@ TC = 25°C  
A
100  
50  
@ TC = 100°C  
Diode Forward Current  
@ TC = 25°C  
I
A
F
100  
50  
G
TO−247  
CASE 340AL  
C
@ TC = 100°C  
E
Diode Pulsed Current  
I
200  
200  
5
A
A
FM  
T
Limited by T Max  
PULSE  
J
Pulsed collector current, T  
I
pulse  
CM  
limited by T  
Jmax  
MARKING DIAGRAM  
Short−circuit withstand time  
= 15 V, V = 400 V,  
t
ms  
SC  
V
GE  
CE  
T ≤ +150°C  
J
VGE  
V
V
Gate−emitter voltage  
$20  
$30  
Transient gate−emitter voltage  
50N60S1  
AYWWG  
(T  
PULSE  
= 5 ms, D < 0.10)  
Power Dissipation  
PD  
W
@ TC = 25°C  
@ TC = 100°C  
417  
208  
Operating junction temperature  
range  
T
J
−55 to +175  
°C  
Storage temperature range  
T
−55 to +175  
260  
°C  
°C  
stg  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Device  
NGTB50N60S1WG  
Package  
Shipping  
30 Units / Rail  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
December, 2014 − Rev. 1  
NGTB50N60S1W/D  
123456

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