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NGTB50N120FL2WAG PDF预览

NGTB50N120FL2WAG

更新时间： 2023-09-03 20:40:18
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 225K
描述
IGBT, 1200 V Field Stop II, 50 A

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NGTB50N120FL2WAG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
风险等级：6.76JESD-609代码：e3
端子面层：Tin (Sn)Base Number Matches：1

NGTB50N120FL2WAG 数据手册

 浏览型号NGTB50N120FL2WAG的Datasheet PDF文件第2页浏览型号NGTB50N120FL2WAG的Datasheet PDF文件第3页浏览型号NGTB50N120FL2WAG的Datasheet PDF文件第4页浏览型号NGTB50N120FL2WAG的Datasheet PDF文件第5页浏览型号NGTB50N120FL2WAG的Datasheet PDF文件第6页浏览型号NGTB50N120FL2WAG的Datasheet PDF文件第7页 
NGTB50N120FL2WAG  
IGBT - Field Stop II / 4 Lead  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop II Trench construction, and provides superior  
performance in demanding switching applications, offering both low  
on state voltage and minimal switching loss. In addition, this new  
device is packaged in a TO−247−4L package that provides significant  
www.onsemi.com  
reduction in E Losses compared to standard TO−247−3L package.  
on  
The IGBT is well suited for UPS and solar applications. Incorporated  
into the device is a soft and fast co−packaged free wheeling diode with  
a low forward voltage.  
50 A, 1200 V  
VCEsat = 2.25 V  
Features  
Eon = 2.15 mJ  
• Extremely Efficient Trench with Field Stop Technology  
C
• T  
= 175°C  
Jmax  
• Improved Gate Control Lowers Switching Losses  
• Separate Emitter Drive Pin  
• TO−247−4L for Minimal E Losses  
• Optimized for High Speed Switching  
• These are Pb−Free Devices  
on  
G
E1  
E
Typical Applications  
• Solar Inverter  
• Uninterruptible Power Inverter Supplies (UPS)  
• Neutral Point Clamp Topology  
TO−247  
CASE 340AR  
4 LEAD  
ABSOLUTE MAXIMUM RATINGS  
C
E
E1  
Rating  
Symbol  
Value  
Unit  
V
G
Collector−emitter voltage  
V
CES  
1200  
Collector current  
@ TC = 25°C  
@ TC = 100°C  
I
C
200  
50  
A
MARKING DIAGRAM  
Pulsed collector current, T  
I
200  
A
A
A
V
pulse  
CM  
limited by T  
Jmax  
Diode forward current @ TC = 25°C  
@ TC = 100°C  
I
F
200  
50  
50N120FL2  
AYWWG  
Diode pulsed current, T  
limited  
I
200  
pulse  
FM  
by T  
Jmax  
Gate−emitter voltage  
Transient gate−emitter voltage  
(T = 5 ms, D < 0.10)  
V
20  
30  
GE  
pulse  
Power Dissipation  
@ TC = 25°C  
@ TC = 100°C  
P
536  
268  
W
D
50N120FL2 = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Operating junction temperature range  
Storage temperature range  
T
−55 to +175  
−55 to +175  
260  
°C  
°C  
°C  
J
WW  
G
= Work Week  
= Pb−Free Package  
T
stg  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
NGTB50N120FL2WAG TO−247 30 Units / Rail  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2016 − Rev. 0  
NGTB50N120FL2WA/D  
1234567...11

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