是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 6.79 |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 600 V |
门极发射器阈值电压最大值: | 6.5 V | 门极-发射极最大电压: | 20 V |
JESD-609代码: | e3 | 最高工作温度: | 175 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 417 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NGTB45N60SWG | ONSEMI |
类似代替 ![]() |
IGBT 600V 45A Welding |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NGTB50N60FL2WG_16 | ONSEMI |
获取价格 |
IGBT - Field Stop II |
![]() |
NGTB50N60FLWG | ONSEMI |
获取价格 |
Insulated Gate Bipolar Transistor (IGBT) |
![]() |
NGTB50N60FWG | ONSEMI |
获取价格 |
Insulated Gate Bipolar Transistor (IGBT) |
![]() |
NGTB50N60L2WG | ONSEMI |
获取价格 |
IGBT 600V 50A FS2 低饱和压 |
![]() |
NGTB50N60S1WG | ONSEMI |
获取价格 |
IGBT,600 V/50A - 焊接 |
![]() |
NGTB50N60SWG | ONSEMI |
获取价格 |
IGBT 600V 50A Welding |
![]() |
NGTB50N65FL2WAG | ONSEMI |
获取价格 |
IGBT,650V,场截止 II,50 A |
![]() |
NGTB50N65FL2WG | ONSEMI |
获取价格 |
IGBT - Field Stop II |
![]() |
NGTB50N65FL2WG_16 | ONSEMI |
获取价格 |
IGBT - Field Stop II |
![]() |
NGTB50N65S1WG | ONSEMI |
获取价格 |
IGBT,FSII,650V,50A |
![]() |