Datasheet > NGTB45N60SWG

NGTB45N60SWG

更新时间： 2023-09-03 20:33:05

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
11页	268K
描述
IGBT 600V 45A Welding

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中文翻译

获取价格

数据手册
替代型号

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NGTB45N60SWG 数据手册

DATA SHEET

www.onsemi.com

IGBT

45 A, 600 V

V_CEsat= 2.2 V

E_off= 0.55 mJ

NGTB45N60SWG

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on state voltage and minimal switching loss. The IGBT is

well suited for half bridge resonant applications. Incorporated into the

device is a soft and fast co−packaged free wheeling diode with a low

forward voltage.

Features

• Low Saturation Voltage using Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Low Gate Charge

• Soft, Fast Free Wheeling Diode

• These are Pb−Free Devices

Typical Applications

• Inductive Heating

• Soft Switching

TO−247

CASE 340AM

ABSOLUTE MAXIMUM RATINGS

MARKING DIAGRAM

Rating

Collector−emitter Voltage

Collector Current

Symbol

Value

Unit

CES

600

@ T = 25°C

@ T = 100°C

45N60S

AYWWG

Pulsed Collector Current, T

180

pulse

Limited by T

Jmax

Diode Forward Current

@ T = 25°C

@ T = 100°C

Diode Pulsed Current, T

Limited

180

pulse

by T

Jmax

45N60S = Specific Device Code

Gate−emitter Voltage

= Assembly Location

= Year

Power Dissipation

= Work Week

= Pb−Free Package

@ T = 25°C

250

@ T = 100°C

Operating Junction Temperature

Range

−55 to +150

°C

ORDERING INFORMATION

Storage Temperature Range

−55 to +150

°C

stg

Lead temperature for soldering, 1/8″

from case for 5 seconds

SLD

260

Device

NGTB45N60SWG

Package

Shipping

30 Units / Rail

TO−247

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

(Pb−Free)

Publication Order Number:

October, 2021 − Rev. 2

NGTB45N60SW/D

12 3 4 5 6 7...11

中文翻译

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NGTB45N60SWG 替代型号

型号	品牌	替代类型	描述	数据表
NGTB50N60FL2WG	ONSEMI	类似代替	IGBT - Field Stop II

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