Datasheet > IKW50N60H3

IKW50N60H3

更新时间： 2023-09-03 20:38:45

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IKW50N60H3 数据手册

IGBT

HighꢀspeedꢀDuoPack:ꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology

withꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode

IKW50N60H3

600Vꢀhighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration

Dataꢀsheet

IndustrialꢀPowerꢀControl

12 3 4 5 6 7...16

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型号	品牌	替代类型	描述	数据表
NGTB45N60S2WG	ONSEMI	功能相似	IGBT，600 V/45 A - 焊接
STGW50H60DF	STMICROELECTRONICS	功能相似	50 A, 600 V field stop trench gate IGBT with Ultrafast diode
IXXH50N60C3D1	IXYS	功能相似	Extreme Light Punch Through IGBT for 20-60 kHz Switching

型号	品牌	获取价格	描述	数据表
IKW50N60H3FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLA
IKW50N60T	INFINEON	获取价格	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p
IKW50N60T_08	INFINEON	获取价格	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKW50N60TA	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N60TFKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL
IKW50N60TXK	INFINEON	获取价格	暂无描述
IKW50N65EH5	INFINEON	获取价格	650V DuoPack IGBT and full-rated diode High speed series fifth generation
IKW50N65EH5_15	INFINEON	获取价格	650V DuoPack IGBT and full-rated diode High speed series fifth generation
IKW50N65ES5	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N65ES5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,