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NGTB40N60L2WG PDF预览

NGTB40N60L2WG

更新时间: 2024-11-06 01:17:43
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 97K
描述
IGBT

NGTB40N60L2WG 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:4 weeks
风险等级:2.08Base Number Matches:1

NGTB40N60L2WG 数据手册

 浏览型号NGTB40N60L2WG的Datasheet PDF文件第2页浏览型号NGTB40N60L2WG的Datasheet PDF文件第3页浏览型号NGTB40N60L2WG的Datasheet PDF文件第4页浏览型号NGTB40N60L2WG的Datasheet PDF文件第5页浏览型号NGTB40N60L2WG的Datasheet PDF文件第6页浏览型号NGTB40N60L2WG的Datasheet PDF文件第7页 
NGTB40N60L2WG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on state voltage and minimal switching loss.  
Features  
www.onsemi.com  
Extremely Efficient Trench with Field Stop Technology  
T  
= 175°C  
Jmax  
40 A, 600 V  
CEsat = 1.65 V  
EOFF = 0.28 mJ  
Soft Fast Reverse Recovery Diode  
V
Optimized for Low V  
5 ms Short−Circuit Capability  
This is a Pb−Free Device  
CEsat  
C
Typical Applications  
Motor Drive Inverters  
Industrial Switching  
Welding  
G
ABSOLUTE MAXIMUM RATINGS  
Rating  
E
Symbol  
VCES  
IC  
Value  
Unit  
V
Collector−emitter voltage  
600  
Collector current  
@ TC = 25°C  
A
80  
40  
@ TC = 100°C  
TO−247  
CASE 340AL  
Diode Forward Current  
@ TC = 25°C  
I
F
A
G
C
80  
40  
E
@ TC = 100°C  
Diode Pulsed Current  
I
160  
160  
5
A
A
FM  
T
Limited by T Max  
PULSE  
J
MARKING DIAGRAM  
Pulsed collector current, T  
I
pulse  
CM  
limited by T  
Jmax  
Short−circuit withstand time  
= 15 V, V = 400 V,  
t
ms  
SC  
V
GE  
CE  
T +150°C  
J
40N60L2  
AYWWG  
Gate−emitter voltage  
VGE  
$20  
$30  
V
V
Transient gate−emitter voltage  
(T  
PULSE  
= 5 ms, D < 0.10)  
Power Dissipation  
PD  
W
@ TC = 25°C  
@ TC = 100°C  
417  
208  
Operating junction temperature  
range  
T
J
−55 to +175  
°C  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Storage temperature range  
T
−55 to +175  
260  
°C  
°C  
stg  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
NGTB40N60L2WG  
Package  
Shipping  
30 Units / Rail  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January, 2016 − Rev. 2  
NGTB40N60L2W/D  

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