Datasheet > NGTB40N60L2WG_16

NGTB40N60L2WG_16

更新时间： 2024-11-06 01:17:43

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	97K
描述
IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NGTB40N60L2WG_16 数据手册

NGTB40N60L2WG

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on state voltage and minimal switching loss.

Features

www.onsemi.com

• Extremely Efficient Trench with Field Stop Technology

• T

= 175°C

Jmax

40 A, 600 V

_CEsat= 1.65 V

E_OFF= 0.28 mJ

• Soft Fast Reverse Recovery Diode

• Optimized for Low V

• 5 ms Short−Circuit Capability

• This is a Pb−Free Device

CEsat

Typical Applications

• Motor Drive Inverters

• Industrial Switching

• Welding

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

V_CES

I_C

Value

Unit

Collector−emitter voltage

600

Collector current

@ TC = 25°C

@ TC = 100°C

TO−247

CASE 340AL

Diode Forward Current

@ TC = 25°C

@ TC = 100°C

Diode Pulsed Current

160

Limited by T Max

PULSE

MARKING DIAGRAM

Pulsed collector current, T

pulse

limited by T

Jmax

Short−circuit withstand time

= 15 V, V = 400 V,

T ≤ +150°C

40N60L2

AYWWG

Gate−emitter voltage

V_GE

$20

$30

Transient gate−emitter voltage

PULSE

= 5 ms, D < 0.10)

Power Dissipation

P_D

@ TC = 25°C

@ TC = 100°C

417

208

Operating junction temperature

range

−55 to +175

°C

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Storage temperature range

−55 to +175

260

°C

stg

Lead temperature for soldering, 1/8”

from case for 5 seconds

SLD

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

NGTB40N60L2WG

Package

Shipping

30 Units / Rail

TO−247

(Pb−Free)

Publication Order Number:

January, 2016 − Rev. 2

NGTB40N60L2W/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NGTB40N60L2WG_16相关器件

型号	品牌	获取价格	描述	数据表
NGTB40N65FL2WG	ONSEMI	获取价格	IGBT - Field Stop II
NGTB40N65FL2WG_16	ONSEMI	获取价格	IGBT - Field Stop II
NGTB40N65IHL2WG	ONSEMI	获取价格	IGBT, 650V 40A FS2 Induction Heating
NGTB40N65IHRTG	ONSEMI	获取价格	IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A
NGTB40N65IHRWG	ONSEMI	获取价格	IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A
NGTB45N60S1WG	ONSEMI	获取价格	IGBT，600 V/45 A - 焊接
NGTB45N60S2WG	ONSEMI	获取价格	IGBT，600 V/45 A - 焊接
NGTB45N60SWG	ONSEMI	获取价格	IGBT 600V 45A Welding
NGTB50N120FL2WAG	ONSEMI	获取价格	IGBT, 1200 V Field Stop II, 50 A
NGTB50N120FL2WG	ONSEMI	获取价格	IGBT, 1200V 50A FS2 Solar/UPS