是否无铅: | 不含铅 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 15 weeks | 风险等级: | 2.08 |
最大集电极电流 (IC): | 80 A | 集电极-发射极最大电压: | 650 V |
门极发射器阈值电压最大值: | 6.5 V | 门极-发射极最大电压: | 20 V |
JESD-609代码: | e3 | 最高工作温度: | 175 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NGTB40N65IHRTG | ONSEMI |
获取价格 |
IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A | |
NGTB40N65IHRWG | ONSEMI |
获取价格 |
IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A | |
NGTB45N60S1WG | ONSEMI |
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IGBT,600 V/45 A - 焊接 | |
NGTB45N60S2WG | ONSEMI |
获取价格 |
IGBT,600 V/45 A - 焊接 | |
NGTB45N60SWG | ONSEMI |
获取价格 |
IGBT 600V 45A Welding | |
NGTB50N120FL2WAG | ONSEMI |
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IGBT, 1200 V Field Stop II, 50 A | |
NGTB50N120FL2WG | ONSEMI |
获取价格 |
IGBT, 1200V 50A FS2 Solar/UPS | |
NGTB50N60FL2WG | ONSEMI |
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IGBT - Field Stop II | |
NGTB50N60FL2WG_16 | ONSEMI |
获取价格 |
IGBT - Field Stop II | |
NGTB50N60FLWG | ONSEMI |
获取价格 |
Insulated Gate Bipolar Transistor (IGBT) |