5秒后页面跳转
NGTB40N65IHL2WG PDF预览

NGTB40N65IHL2WG

更新时间: 2024-11-06 11:13:43
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 246K
描述
IGBT, 650V 40A FS2 Induction Heating

NGTB40N65IHL2WG 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:2.08
最大集电极电流 (IC):80 A集电极-发射极最大电压:650 V
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JESD-609代码:e3最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin (Sn)Base Number Matches:1

NGTB40N65IHL2WG 数据手册

 浏览型号NGTB40N65IHL2WG的Datasheet PDF文件第2页浏览型号NGTB40N65IHL2WG的Datasheet PDF文件第3页浏览型号NGTB40N65IHL2WG的Datasheet PDF文件第4页浏览型号NGTB40N65IHL2WG的Datasheet PDF文件第5页浏览型号NGTB40N65IHL2WG的Datasheet PDF文件第6页浏览型号NGTB40N65IHL2WG的Datasheet PDF文件第7页 
NGTB40N65IHL2WG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop (FS) Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on state voltage and minimal switching loss. The IGBT is  
well suited for half bridge resonant applications. Incorporated into the  
device is a soft and fast copackaged free wheeling diode with a low  
forward voltage.  
www.onsemi.com  
40 A, 650 V  
Features  
V
CEsat = 1.8 V  
Extremely Efficient Trench with Fieldstop Technology  
Low Switching Loss Reduces System Power Dissipation  
Optimized for Low Losses in IH Cooker Application  
Eoff = 0.36 mJ  
C
T  
= 175°C  
Jmax  
Soft, Fast Free Wheeling Diode  
This is a PbFree Device  
G
Typical Applications  
Inductive Heating  
Soft Switching  
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collectoremitter voltage  
650  
Collector current  
@ TC = 25°C  
A
80  
40  
G
TO247  
CASE 340AL  
@ TC = 100°C  
C
E
Pulsed collector current, T  
ICM  
IF  
160  
A
A
pulse  
limited by T  
Jmax  
Diode forward current  
@ TC = 25°C  
80  
40  
MARKING DIAGRAM  
@ TC = 100°C  
Diode pulsed current, T  
limited  
IFM  
160  
A
V
pulse  
by T  
Jmax  
Gateemitter voltage  
VGE  
$20  
$30  
Transient Gate Emitter Voltage  
(t = 5 ms, D < 0.010)  
p
40N65IHL2  
AYWWG  
Power Dissipation  
@ TC = 25°C  
PD  
W
300  
150  
@ TC = 100°C  
Operating junction temperature  
range  
T
J
55 to +175  
°C  
Storage temperature range  
T
55 to +175  
°C  
°C  
stg  
A
Y
= Assembly Location  
= Year  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
WW  
G
= Work Week  
= PbFree Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Device  
NGTB40N65IHL2WG  
Package  
Shipping  
TO247 30 Units / Rail  
(PbFree)  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2015 Rev. 1  
NGTB40N65IHL2W/D  

与NGTB40N65IHL2WG相关器件

型号 品牌 获取价格 描述 数据表
NGTB40N65IHRTG ONSEMI

获取价格

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A
NGTB40N65IHRWG ONSEMI

获取价格

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A
NGTB45N60S1WG ONSEMI

获取价格

IGBT,600 V/45 A - 焊接
NGTB45N60S2WG ONSEMI

获取价格

IGBT,600 V/45 A - 焊接
NGTB45N60SWG ONSEMI

获取价格

IGBT 600V 45A Welding
NGTB50N120FL2WAG ONSEMI

获取价格

IGBT, 1200 V Field Stop II, 50 A
NGTB50N120FL2WG ONSEMI

获取价格

IGBT, 1200V 50A FS2 Solar/UPS
NGTB50N60FL2WG ONSEMI

获取价格

IGBT - Field Stop II
NGTB50N60FL2WG_16 ONSEMI

获取价格

IGBT - Field Stop II
NGTB50N60FLWG ONSEMI

获取价格

Insulated Gate Bipolar Transistor (IGBT)