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NGTG50N60FWG PDF预览

NGTG50N60FWG

更新时间: 2024-11-05 12:26:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管双极性晶体管
页数 文件大小 规格书
9页 176K
描述
Insulated Gate Bipolar Transistor (IGBT)

NGTG50N60FWG 数据手册

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NGTG50N60FWG  
IGBT  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Trench construction, and provides superior performance  
in demanding switching applications, offering both low on state  
voltage and minimal switching loss.  
http://onsemi.com  
Features  
Optimized for Very Low V  
CEsat  
Low Switching Loss Reduces System Power Dissipation  
5 ms ShortCircuit Capability  
These are PbFree Devices  
50 A, 600 V  
CEsat = 1.50 V  
V
Typical Applications  
Solar Inverters  
Uninterruptible Power Supples (UPS)  
Motor Drives  
C
G
ABSOLUTE MAXIMUM RATINGS  
E
Rating  
Symbol  
VCES  
IC  
Value  
Unit  
V
Collectoremitter voltage  
600  
Collector current  
@ TC = 25°C  
A
100  
50  
@ TC = 100°C  
Pulsed collector current, T  
I
200  
A
pulse  
CM  
limited by T  
Jmax  
G
TO247  
CASE 340L  
STYLE 4  
C
Shortcircuit withstand time  
t
5
ms  
SC  
E
V
= 15 V, V = 300 V,  
GE  
CE  
T +150°C  
J
Gateemitter voltage  
VGE  
PD  
$20  
$30  
V
Transient GateEmitter Voltage  
MARKING DIAGRAM  
Power Dissipation  
@ TC = 25°C  
W
223  
89  
@ TC = 100°C  
Operating junction temperature  
range  
T
55 to +150  
°C  
J
G50N60F  
AYWWG  
Storage temperature range  
T
stg  
55 to +150  
°C  
°C  
Lead temperature for soldering, 1/8”  
from case for 5 seconds  
T
SLD  
260  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
ORDERING INFORMATION  
Device  
NGTG50N60FWG  
Package  
Shipping  
TO247 30 Units / Rail  
(PbFree)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
December, 2012 Rev. 0  
NGTG50N60FW/D  

NGTG50N60FWG 替代型号

型号 品牌 替代类型 描述 数据表
NGTB40N60IHLWG ONSEMI

类似代替

Insulated Gate Bipolar Transistor (IGBT)

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