Datasheet > JANSG2N7471T1

JANSG2N7471T1

更新时间： 2023-12-06 19:51:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1134K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 500 krad(Si) TID, QPL

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JANSG2N7471T1 数据手册

IRHMS57160 (JANSR2N7471T1)

Radiation Hardened Power MOSFETThru-Hole (Low-Ohmic TO-254AA)

Device Characteristics

2.1

Electrical Characteristics (Pre-Irradiation)

Table 3

Symbol

Static and Dynamic Electrical Characteristics @ T_j= 25°C (Unless Otherwise Specified)

Parameter

Min. Typ.

Max.

Unit Test Conditions

Drain-to-Source Breakdown

Voltage

BV_DSS

100

—

0.11

—

V_GS= 0V, I_D= 1.0mA

Breakdown Voltage Temp.

Coefficient

BV_DSS/T_J

R_DS(on)

—

V/°C Reference to 25°C, I_D= 1.0mA

Static Drain-to-Source On-State

Resistance

—

m

V_GS= 12V, I_D2= 45A ¹

V_GS(th)

Gfs

Gate Threshold Voltage

2.0

—

4.0

—

V_DS= V_GS, I_D= 1mA

V_DS= 15V, I_D2= 45A ¹

V_DS= 80V, V_GS= 0V

V_DS= 80V, V_GS= 0V, T_J= 125°C

V_GS= 20V

Forward Transconductance

I_DSS

I_GSS

Zero Gate Voltage Drain Current

A

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

100

-100

160

V_GS= -20V

Q_G

I_D1= 45A

V_DS= 50V

V_GS= 12V

Q_GS

Q_GD

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

I_D1= 45A **

125

V_DD= 50V

R_G= 2.35

V_GS= 12V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

Measured from Drain lead

(6mm / 0.25 in from package)

to Source lead (6mm/ 0.25

in from package) with Source

wire internally bonded from

Source pin to Drain pad

L_s+L_D

Total Inductance

—

6.8

—

C_iss

C_oss

C_rss

R_G

Input Capacitance

—

6270

1620

—

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

1.0

ƒ = 1.0MHz, open drain



** Switching speed maximum limits are based on manufacturing test equipment and capability.

¹Pulse width  300 µs; Duty Cycle  2%

4 of 13

2022-05-26

1 2 345 6 7...13

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与JANSG2N7471T1相关器件

型号	品牌	获取价格	描述	数据表
JANSG2N7479U3	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
JANSG2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSG2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad
JANSG2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSG2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr
JANSG2N7491T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7492T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7493T2	INFINEON	获取价格	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M
JANSG2N7494U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
JANSG2N7495U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

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