Datasheet > JANSG2N7471T1

JANSG2N7471T1

更新时间： 2023-12-06 19:51:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1134K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 500 krad(Si) TID, QPL

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JANSG2N7471T1 数据手册

IRHMS57160 (JANSR2N7471T1)

Radiation Hardened Power MOSFETThru-Hole (Low-Ohmic TO-254AA)

Device Characteristics

2.4.2

Single Event Effects — Safe Operating Area

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event

Effects (SEE). Single Event Effects characterization is illustrated in Fig. 1 and Table 7.

Table 7

Typical Single Event Effects Safe Operating Area

V_DS(V)

V_GS= -10V

100

LET

Energy

(MeV)

Range

(µm)

(MeV·cm²/mg)

V_GS= 0V

100

V_GS= -5V

100

V_GS= -15V

V_GS= -20V

38 ± 5%

300 ± 7.5%

330 ± 7.5%

350 ± 7.5%

38 ± 7.5%

31 ± 10%

28 ± 7.5%

100

61 ± 5%

100

84 ± 5%

100

—

Figure 1

Typical Single Event Effect, Safe Operating Area

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2022-05-26

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