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JANSG2N7491T2

更新时间： 2024-01-31 03:45:54
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 138K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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中文翻译

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JANSG2N7491T2 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：BCY
包装说明：CYLINDRICAL, O-MBCY-W3针数：2
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.38Is Samacsys：N
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：520 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：12 A
最大漏源导通电阻：0.045 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-205AFJESD-30 代码：O-MBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANSG2N7491T2 数据手册

 浏览型号JANSG2N7491T2的Datasheet PDF文件第2页浏览型号JANSG2N7491T2的Datasheet PDF文件第3页浏览型号JANSG2N7491T2的Datasheet PDF文件第4页浏览型号JANSG2N7491T2的Datasheet PDF文件第5页浏览型号JANSG2N7491T2的Datasheet PDF文件第6页浏览型号JANSG2N7491T2的Datasheet PDF文件第7页 
                                                                             
ꢁ
PD - 93793E  
IRHF57Z30  
JANSR2N7491T2  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
REF: MIL5-PRF-19500/701  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF57Z30  
IRHF53Z30  
IRHF54Z30  
100K Rads (Si) 0.045Ω 12A* JANSR2N7491T2  
300K Rads (Si) 0.045Ω 12A* JANSF2N7491T2  
500K Rads (Si) 0.045Ω 12A* JANSG2N7491T2  
IRHF58Z30 1000K Rads (Si) 0.056Ω 12A* JANSH2N7491T2  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Identical Pre and Post Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Electrically Isolated  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
12*  
10  
48  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
520  
mJ  
A
AS  
I
12  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
3.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 ( 0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  
12345678

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