ꢁ
PD-93752C
IRHNJ57034
RADIATION HARDENED
POWER MOSFET
JANSR2N7480U3
60V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/703
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNJ57034 100K Rads (Si)
IRHNJ53034 300K Rads (Si)
IRHNJ54034 600K Rads (Si)
0.030Ω 22A* JANSR2N7480U3
0.030Ω 22A* JANSF2N7480U3
0.030Ω 22A* JANSG2N7480U3
IRHNJ58034 1000K Rads (Si) 0.038Ω
22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
22*
D
GS
GS
C
A
I
D
= 12V, T = 100°C Continuous Drain Current
21
88
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
100
22
GS
E
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
10
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/16/04