JANSG2N7480U3

更新时间： 2024-11-04 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	190K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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中文翻译

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JANSG2N7480U3 数据手册

ꢁ

PD-93752C

IRHNJ57034

RADIATION HARDENED

POWER MOSFET

JANSR2N7480U3

60V, N-CHANNEL

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/703

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNJ57034 100K Rads (Si)

IRHNJ53034 300K Rads (Si)

IRHNJ54034 600K Rads (Si)

0.030Ω 22A* JANSR2N7480U3

0.030Ω 22A* JANSF2N7480U3

0.030Ω 22A* JANSG2N7480U3

IRHNJ58034 1000K Rads (Si) 0.038Ω

22A* JANSH2N7480U3

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low Rdson and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

22*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

100

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

06/16/04

12 3 4 5 6 7 8

中文翻译

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与JANSG2N7480U3相关器件

型号	品牌	获取价格	描述	数据表
JANSG2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad
JANSG2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSG2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr
JANSG2N7491T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7492T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7493T2	INFINEON	获取价格	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M
JANSG2N7494U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
JANSG2N7495U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
JANSG2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSH2N2221AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A

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