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JANSH2N2221AL PDF预览

JANSH2N2221AL

更新时间: 2024-02-04 15:24:01
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
3页 64K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN

JANSH2N2221AL 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:BCY包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:3A001.A.1.AHTS代码:8541.21.00.95
风险等级:5.49外壳连接:COLLECTOR
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-206AAJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Qualified参考标准:MIL-19500/255
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):300 ns最大开启时间(吨):35 ns
Base Number Matches:1

JANSH2N2221AL 数据手册

 浏览型号JANSH2N2221AL的Datasheet PDF文件第2页浏览型号JANSH2N2221AL的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/255  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
JANSF – 300K Rads (Si)  
JANSG – 500K Rads (Si)  
JANSH – 1MEG Rads (Si)  
2N2221A  
2N2222A  
2N2221AL  
2N2221AUA  
2N2221AUB  
2N2221AUBC  
2N2222AL  
2N2222AUA  
2N2222AUB  
2N2222AUBC  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
75  
Vdc  
6.0  
Vdc  
Collector Current  
800  
mAdc  
Total Power Dissipation @ TA = +25°C  
TO-18 (TO-206AA)  
2N2221A, 2N2222A  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
0.5  
PT  
W
0.65  
0.50  
Operating & Storage Junction Temperature Range  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
4 PIN  
2N2221AUA, 2N2222AUA  
Thermal Resistance, Junction-to-Ambient  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
325  
210  
325  
°C/W  
RθJA  
1. Derate linearly 3.08 mW/°C above TA > +37.5°C  
2. Derate linearly 4.76 mW/°C above TA > +63.5°C  
3 PIN  
2N2221AUB, 2N2222AUB  
2N2221AUBC, 2N2222AUBC  
(UBC = Ceramic Lid Version)  
T4-LDS-0042 Rev. 2 (080857)  
Page 1 of 3  

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