Datasheet > JANSG2N7494U5

JANSG2N7494U5

更新时间： 2024-09-22 04:04:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	133K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

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JANSG2N7494U5 数据手册

ꢁ

PD - 93863E

IRHE57Z30

JANSR2N7494U5

30V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-18)

^{REF: MIL}5^{-PRF-19500/700}

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHE57Z30

IRHE53Z30

IRHE54Z30

100K Rads (Si) 0.07Ω

300K Rads (Si) 0.07Ω

500K Rads (Si) 0.07Ω

12A* JANSR2N7494U5

12A* JANSF2N7494U5

12A* JANSG2N7494U5

12A* JANSH2N7494U5

IRHE58Z30 1000K Rads (Si) 0.07Ω

LCC-18

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

12*

8.0

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

@ T = 25°C

Max. Power Dissipation

W/°C

Linear Derating Factor

0.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

156

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

2.5

V/ns

dv/dt

2.3

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.42 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

04/26/06

12 3 4 5 6 7 8

中文翻译

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与JANSG2N7494U5相关器件

型号	品牌	获取价格	描述	数据表
JANSG2N7495U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
JANSG2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSH2N2221AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSH2N2221AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2221AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2221AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2222AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSH2N2222AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2222AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N7261	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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