是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-CDSO-N4 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.1.A |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.48 |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-CDSO-N4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.5 W | 认证状态: | Qualified |
参考标准: | MIL-19500/255 | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 35 ns |
Base Number Matches: | 1 |
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