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JANSH2N7269D PDF预览

JANSH2N7269D

更新时间: 2024-01-01 12:44:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 271K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

JANSH2N7269D 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72其他特性:RADIATION HARDENED
雪崩能效等级(Eas):500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):26 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:150 W
最大脉冲漏极电流 (IDM):104 A认证状态:Not Qualified
参考标准:MIL-19500/603表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):280 ns最大开启时间(吨):173 ns
Base Number Matches:1

JANSH2N7269D 数据手册

 浏览型号JANSH2N7269D的Datasheet PDF文件第2页浏览型号JANSH2N7269D的Datasheet PDF文件第3页浏览型号JANSH2N7269D的Datasheet PDF文件第4页浏览型号JANSH2N7269D的Datasheet PDF文件第5页浏览型号JANSH2N7269D的Datasheet PDF文件第6页浏览型号JANSH2N7269D的Datasheet PDF文件第7页 
PD - 90674C  
IRHM7250  
JANSR2N7269  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
200V, N-CHANNEL  
REF: MIL-PRF-19500/603  
RAD HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHM7250  
IRHM3250  
IRHM4250  
IRHM8250  
100K Rads (Si) 0.10Ω  
300K Rads (Si) 0.10Ω  
600K Rads (Si) 0.10Ω  
1000K Rads (Si) 0.10Ω  
26A JANSR2N7269  
26A JANSF2N7269  
26A JANSG2N7269  
26A JANSH2N7269  
TO-254AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
26  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16  
104  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
Linear Derating Factor  
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
A
AS  
I
26  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
9.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
10/11/00  

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