生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.0035 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/683 |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSH2N7470T1 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
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JANSH2N7470T1PBF | INFINEON |
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暂无描述 |
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JANSH2N7480U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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JANSH2N7481U3 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met |
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JANSH2N7482T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
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JANSH2N7491T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |
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JANSH2N7492T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |
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JANSH2N7493T2 | INFINEON |
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Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M |
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JANSH2N7494U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
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JANSH2N7495U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
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