Datasheet > JANSL2N3057A

JANSL2N3057A

更新时间： 2024-01-18 03:51:25

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
7页	291K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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JANSL2N3057A 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.78	认证状态：	Qualified
Base Number Matches：	1

JANSL2N3057A 数据手册

JANS_2N3057A

Qualified Levels:

JANSM, JANSD,

JANSP, JANSL, and

JANSR

RADIATION HARDENED LOW POWER

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/391

DESCRIPTION

This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR

level for high-reliability applications requiring a radiation hardened device. Microsemi also

offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N3057.

RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options).

TO-46 (TO-206AB)

Package

Also available in:

TO-39 (TO-205AD)

(leaded)

APPLICATIONS / BENEFITS

JANS_2N3019, 2N3019S

•

Low profile metal TO-46 leaded package.

Light weight.

TO-18 (TO-206AA)

(leaded)

General–purpose switching and amplifier applications.

Military and high-reliability applications.

JANS_2N3700

UB package

(surface mount)

JANS_2N3700UB

MAXIMUM RATINGS @ T_A= +25 ^oC unless otherwise noted.

Parameters/Test Conditions

Junction and Storage Temperature

Thermal Impedance Junction-to-Ambient

Thermal Impedance Junction-to-Case

Collector-Emitter Voltage

Symbol

T_Jand T_STG

R_ӨJA

Value

-65 to +200

325

Unit

^oC

^oC/W

R_ӨJC

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

V_CEO

Collector-Base Voltage

V_CBO

140

Emitter-Base Voltage

V_EBO

7.0

Collector Current

I_C

1.0

Fax: (978) 689-0803

Total Power Dissipation:

@ T_A= +25 ^oC ⁽¹⁾

@ T_C= +25 ^oC ⁽²⁾

P_D

0.5

MSC – Ireland

1.8

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. Derate linearly 2.3 mW/°C for T_A≥ +25 °C.

2. Derate linearly 10.3 mW/°C for T_C≥ +25 °C.

Website:

www.microsemi.com

T4-LDS-0262, Rev. 1 (120783)

Page 1 of 7

12 3 4 5 6 7

中文翻译

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与JANSL2N3057A相关器件

型号	品牌	获取价格	描述	数据表
JANSL2N3439	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
JANSL2N3439L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO
JANSL2N3439UA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC,
JANSL2N3440	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
JANSL2N3440UA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC,
JANSL2N3498	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSL2N3498L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANSL2N3498L/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSL2N3499	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSL2N3499L/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,

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