Datasheet > JANSL2N3440UA

JANSL2N3440UA

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	194K
描述
Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, LCC-4

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数据手册

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JANSL2N3440UA 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

RADIATION HARDENED

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/368

DEVICES

LEVELS

JANSM – 3K Rads (Si)

JANSD – 10K Rads (Si)

JANSP – 30K Rads (Si)

JANSL – 50K Rads (Si)

JANSR – 100K Rads (Si)

2N3439

2N3439L

2N3439UA

2N3440

2N3440L

2N3440UA

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol 2N3439 2N3440 Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

350

450

250

300

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

7.0

1.0

Collector Current

(1)

(2)

Total Power Dissipation

@ T_A= +25°C

@ T_C= +25°C

0.8

5.0

2.0

P_T

@ T_SP= +25°C ⁽³⁾

TO-5

2N3439L, 2N3440L

Operating & Storage Temperature Range

T_op, T_stg

-65 to +200

°C

NOTES:

1) Derate linearly @ 4.57mW/°C for T_A> +25°C

2) Derate linearly @ 28.5mW/°C for T_C> +25°C

3) Derate linearly @ 14mW/°C for T_SP> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

350

250

I_C= 10mAdc

_BB1= 470Ω;V_BB1= 6V

2N3439 / L / UA

2N3440 / L / UA

V_(BR)CEO

Vdc

L = 25mH (min); f = 30 – 60Hz

Collector-Emitter Cutoff Current

V_CE= 300Vdc

TO-39 (TO-205AD)

2N3439, 2N3440

2.0

I_CEO

µAdc

2N3439 / L / UA

2N3440 / L / UA

_CE= 200Vdc

Emitter-Base Cutoff Current

V_EB= 7.0Vdc

Collector-Emitter Cutoff Current

I_EBO

I_CEX

µAdc

5.0

V_CE= 450Vdc, V_BE= -1.5Vdc

2N3439 / L / UA

2N3440 / L / UA

_CE= 300Vdc, V_BE= -1.5Vdc

Collector-Base Cutoff Current

V_CB= 360Vdc

V_CB= 250Vdc

2.0

5.0

2N3439 / L / UA

2N3440 / L / UA

2N3439 / L / UA

2N3440 / L / UA

I_CBO

µAdc

2N3439UA, 2N3440UA

_CB= 450Vdc

_CB= 300Vdc

T4-LDS-0134 Rev. 2 (110088)

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与JANSL2N3440UA相关器件

型号	品牌	获取价格	描述	数据表
JANSL2N3498	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSL2N3498L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANSL2N3498L/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSL2N3499	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSL2N3499L/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSL2N3500	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSL2N3500/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSL2N3500L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANSL2N3500L/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSL2N3501	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205

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