生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N15 | 针数: | 18 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 87 mJ |
外壳连接: | SOURCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 11.7 A |
最大漏源导通电阻: | 0.08 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CQCC-N15 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 46.8 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/700 |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSH2N7496U5 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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JANSL2N2221A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A |
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JANSL2N2221AL | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A |
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JANSL2N2221AUBC | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC |
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JANSL2N2222A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A |
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JANSL2N2222A/TR | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, |
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JANSL2N2222AL | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A |
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JANSL2N2484UA | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SURFAC |
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JANSL2N2906A | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206A |
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JANSL2N2906A/TR | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, |
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