Datasheet > JANSH2N7493T2

JANSH2N7493T2

更新时间： 2024-09-24 10:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	179K
描述
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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JANSH2N7493T2 数据手册

ꢁ

PD-93789F

IRHF57130

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

JANSR2N7493T2

100V, N-CHANNEL

REF: MIL-PRF-19500/701

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF57130

IRHF53130

IRHF54130

IRHF58130

100K Rads (Si)

300K Rads (Si)

500K Rads (Si)

0.08Ω

11.7A JANSR2N7493T2

11.7A JANSF2N7493T2

11.7A JANSG2N7493T2

11.7A JANSH2N7493T2

1000K Rads (Si) 0.10Ω

TO-39

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Identical Pre- & Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

11.7

= 12V, T = 100°C Continuous Drain Current

7.4

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.2

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

173

11.7

2.5

dv/dt

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

4.9

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in./1.6mm from case for 10s)

0.98 (Typical)

For footnotes refer to the last page

www.irf.com

10/27/11

12 3 4 5 6 7 8

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与JANSH2N7493T2相关器件

型号	品牌	获取价格	描述	数据表
JANSH2N7494U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
JANSH2N7495U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
JANSH2N7496U5	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANSL2N2221A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSL2N2221AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSL2N2221AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSL2N2222A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSL2N2222A/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSL2N2222AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSL2N2484UA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SURFAC

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