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JANSH2N7269U

更新时间： 2024-01-25 10:43:00
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关脉冲晶体管
页数 文件大小 规格书
27页 1035K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

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JANSH2N7269U 技术参数

生命周期：Active包装说明：CHIP CARRIER, R-CBCC-N3
针数：3Reach Compliance Code：unknown
ECCN代码：3A001.A.1.AHTS代码：8541.29.00.95
风险等级：5.09其他特性：RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (ID)：26 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-267AB
JESD-30 代码：R-CBCC-N3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：104 A
认证状态：Qualified参考标准：MIL-19500/603
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANSH2N7269U 数据手册

 浏览型号JANSH2N7269U的Datasheet PDF文件第2页浏览型号JANSH2N7269U的Datasheet PDF文件第3页浏览型号JANSH2N7269U的Datasheet PDF文件第4页浏览型号JANSH2N7269U的Datasheet PDF文件第5页浏览型号JANSH2N7269U的Datasheet PDF文件第6页浏览型号JANSH2N7269U的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 20 June 2013.  
MIL-PRF-19500/603J  
6 May 2013  
SUPERSEDING  
MIL-PRF-19500/603H  
1 July 2011  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED  
(TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON,  
TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U,  
JANTXVR, F, G, H; JANSR, F, G, AND H  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,  
MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each device  
type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current  
(IAS). See 6.5 for JANHC and JANKC die versions.  
* 1.2 Physical dimensions. See figure 1 (TO-254AA) and figure 2 (surface mount, TO-276AB).  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
C
Type  
P
P
R
θJA  
R
V
V
V
I
I
(3) (4)  
I
S
T
T
θJC  
DS  
DG  
GS  
D1  
D2  
(1)  
(2)  
(3) (4)  
T
= +25°C  
T
= +100°C  
A
C
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
A dc  
°C/W  
°C/W  
2N7394, 2N7394U  
2N7268, 2N7268U  
2N7269, 2N7269U  
2N7270, 2N7270U  
150  
150  
150  
150  
4
4
4
4
35  
35  
35  
35  
0.83  
0.83  
0.83  
0.83  
60  
100  
200  
500  
60  
100  
200  
500  
35.0  
34.0  
26.0  
11.0  
30.0  
21.0  
16.0  
7.0  
35.0  
34.0  
26.0  
11.0  
±20  
±20  
±20  
±20  
Type  
I
T and T  
J
V
DM  
STG  
ISO  
70,000 ft altitude  
A(pk)  
V dc  
°C  
-55 to +150  
2N7394, 2N7394U  
2N7268, 2N7268U  
2N7269, 2N7269U  
2N7270, 2N7270U  
140  
136  
104  
44  
N/A  
N/A  
N/A  
500  
See notes next page.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.dla.mil/.  
AMSC N/A  
FSC 5961  
 
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 		Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
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