生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | 3A001.A.1.A | HTS代码: | 8541.29.00.95 |
风险等级: | 5.09 | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 26 A | 最大漏源导通电阻: | 0.11 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-267AB |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 104 A |
认证状态: | Qualified | 参考标准: | MIL-19500/603 |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSH2N7270 | ETC |
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500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package | |
JANSH2N7270D | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
JANSH2N7270U | MICROSEMI |
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Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
JANSH2N7280 | INFINEON |
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Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M | |
JANSH2N7298 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-254AA | |
JANSH2N7380 | ETC |
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100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package | |
JANSH2N7380U3 | INFINEON |
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Power Field-Effect Transistor, | |
JANSH2N7381 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AA | |
JANSH2N7389 | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met | |
JANSH2N7390 | INFINEON |
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Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal |