Datasheet > JANSH2N7298

JANSH2N7298

更新时间： 2024-09-22 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
22页	86K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 9A I(D) \| TO-254AA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSH2N7298 数据手册

INCH-POUND

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 17 March 1998.

MIL-PRF-19500/605A

17 December 1997

SUPERSEDING

MIL-S-19500/605

10 November 1992

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY)

TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298

JANTXVM, D, R, H AND JANSM, D AND R

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation

hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance

are provided for each device type specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to TO-254).

1.3 Maximum ratings. T_A= +25°C unless otherwise specified.

| P_T

| I_D2

| I_S

|Type

|P_T1/

|T_C

| V_DS

| V_DG

| V_GS

|I_D12/

|T_C

| I_DM

|T_J

|and

|T_STG

| V_ISO

|70,000

| feet

|T_A

|T_C

|= +25°C |= +25°C |

|= +25°C |= 100°C |

|altitude

| V dc | V dc | V dc |A dc

|A dc

|A dc |A (pk) | °C

| V dc

|2N7292 | 125

|2N7294 |

|2N7296 |

2.5

| 100

| 200

| 250

| 500

| 100

| 200

| 250

| 500

| ±20

|25.0

|23.0

|17.0

| 9.0

|20.0

|15.0

|11.0

| 6.0

|25.0 | 75

|23.0 | 69

|17.0 | 51

| 9.0 | 27

| -55

| to

| N/A

| 250

|2N7298 |

|+150 | 500

1/ Derate linearly 1.0 W/°C for T_C> +25°C; P_T= T_JM- T_C

R_qJC

max-

T _J

)x(

T_C

I _D

(

)

T _Jmax

R_QJC

R_DS

|Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving

|this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East

|Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal

|(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

中文翻译

下载PDF

与JANSH2N7298相关器件

型号	品牌	获取价格	描述	数据表
JANSH2N7380	ETC	获取价格	100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
JANSH2N7380U3	INFINEON	获取价格	Power Field-Effect Transistor,
JANSH2N7381	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-257AA
JANSH2N7389	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
JANSH2N7390	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal
JANSH2N7394	ETC	获取价格	60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSH2N7394D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
JANSH2N7394U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSH2N7431	ETC	获取价格	60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSH2N7431D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met

与JANSH2N7298相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

76
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

67
SL74HC10N：高性能三输入与非门解析
2024-09-03

151
AIC1781A 电池充电控制器深度解析
2024-09-03

133

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSH2N7298

JANSH2N7298 数据手册

与JANSH2N7298相关器件

与JANSH2N7298相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSH2N7298

JANSH2N7298 数据手册

与JANSH2N7298相关器件

与JANSH2N7298相关文章

您还可以找

您在本页遇到什么问题？