是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TO-254AA, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
Is Samacsys: | N | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 34 A | 最大漏极电流 (ID): | 34 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 136 A |
认证状态: | Qualified | 参考标准: | MILITARY STANDARD (USA) |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANSF2N7268 | INFINEON |
完全替代 |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
JANSG2N7268 | INFINEON |
完全替代 |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHM7150 | INFINEON |
功能相似 |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
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JANSH2N7268D | INFINEON |
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JANSH2N7270U | MICROSEMI |
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JANSH2N7280 | INFINEON |
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