是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CQCC-N15 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 130 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.185 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/601 |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSH2N7261U | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18) | |
JANSH2N7262 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR | |
JANSH2N7262U | ETC |
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200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package | |
JANSH2N7268 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE | |
JANSH2N7268D | INFINEON |
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Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me | |
JANSH2N7268U | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
JANSH2N7269 | ETC |
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200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package | |
JANSH2N7269D | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
JANSH2N7269U | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
JANSH2N7269U | MICROSEMI |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |