5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> JANSH2N7262
JANSH2N7262 PDF预览

JANSH2N7262

更新时间： 2024-02-26 05:30:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 304K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR

阅读下载

中文翻译

获取价格

JANSH2N7262 技术参数

是否无铅： 含铅生命周期：Transferred
零件包装代码：LCC包装说明：CHIP CARRIER, R-CQCC-N15
针数：18Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.1
雪崩能效等级（Eas）：240 mJ外壳连接：SOURCE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (ID)：5.5 A最大漏源导通电阻：0.36 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CQCC-N15
元件数量：1端子数量：15
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：22 A
认证状态：Not Qualified参考标准：MIL-19500/601
表面贴装：YES端子形式：NO LEAD
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANSH2N7262 数据手册

 浏览型号JANSH2N7262的Datasheet PDF文件第2页浏览型号JANSH2N7262的Datasheet PDF文件第3页浏览型号JANSH2N7262的Datasheet PDF文件第4页浏览型号JANSH2N7262的Datasheet PDF文件第5页浏览型号JANSH2N7262的Datasheet PDF文件第6页浏览型号JANSH2N7262的Datasheet PDF文件第7页 
PD - 90672C  
IRHF7230  
IRHF8230  
JANSR2N7262  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
JANSH2N7262  
[REF:MIL-PRF-19500/601]  
N CHANNEL  
MEGA RAD HARD  
Product Summary  
200Volt, 0.35Ω, MEGA RAD HARD HEXFET  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage  
stability and breakdown voltage stability at total  
radiaition doses as high as 1x106 Rads(Si). Under  
identical pre- and post-irradiation test conditions, In-  
ternational Rectifier’s RAD HARD HEXFETs retain  
identical electrical specifications up to 1 x 105 Rads  
(Si) total dose. No compensation in gate drive circuitry  
is required. These devices are also capable of surviv-  
ing transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few  
microseconds. Since the RAD HARD process utilizes  
International Rectifier’s patented HEXFET technology,  
the user can expect the highest quality and reliability  
in the industry.  
Part Number  
IRHF7230  
IRHF8230  
BVDSS  
200V  
200V  
RDS(on)  
0.35Ω  
0.35Ω  
ID  
5.5A  
5.5A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy  
pulse circuits in space and weapons environments.  
Surface Mount  
Lightweight  
Pre-Irradiation  
Absolute Maximum Ratings   
Parameter  
IRHF7230, IRHF8230  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
5.5  
D
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
3.5  
GS  
C
I
Pulsed Drain Current ‚  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
22  
DM  
@ T = 25°C  
P
D
25  
W
W/°C  
V
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy ƒ  
Peak Diode Recovery dv/dt „  
Operating Junction  
240  
mJ  
AS  
dv/dt  
5.0  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
0.98 (typical)  
www.irf.com  
1
10/13/98  
1234567...12

中文翻译

下载PDF

JANSH2N7262 替代型号

型号 品牌 替代类型 描述 数据表
IRHF7230 INFINEON

功能相似

 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR
JANSR2N7262 INFINEON

类似代替

 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR

与JANSH2N7262相关器件

型号 品牌 获取价格 描述 数据表
JANSH2N7262U ETC

获取价格

 		200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
JANSH2N7268 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE
JANSH2N7268D INFINEON

获取价格

 		Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
JANSH2N7268U INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSH2N7269 ETC

获取价格

 		200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSH2N7269D INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSH2N7269U INFINEON

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSH2N7269U MICROSEMI

获取价格

 		Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSH2N7270 ETC

获取价格

 		500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSH2N7270D INFINEON

获取价格

 		Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta

与JANSH2N7262相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证