是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.72 | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 34 A | 最大漏源导通电阻: | 0.076 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 150 W |
最大脉冲漏极电流 (IDM): | 136 A | 认证状态: | Not Qualified |
参考标准: | MILITARY STANDARD (USA) | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 235 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANSH2N7268U | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
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JANSH2N7269 | ETC | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
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JANSH2N7269D | INFINEON | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |
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JANSH2N7269U | INFINEON | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |
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JANSH2N7269U | MICROSEMI | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |
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JANSH2N7270 | ETC | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
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