Datasheet > JANSG2N7520U3C

JANSG2N7520U3C

更新时间： 2023-12-06 20:12:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	394K
描述
Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 500 krad(Si) TID, QPL

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JANSG2N7520U3C 数据手册

PD-96911B

IRHYS597034CM

JANSR2N7520T3

60V, P-CHANNEL

REF: MIL-PRF-19500/732

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

THRU-HOLE (Low-Ohmic TO-257AA)

Product Summary

Part Number

IRHYS597034CM

IRHYS593034CM

Radiation Level RDS(on)

I_D

QPL Part Number

100 kRads(Si)

300 kRads(Si)

-20A JANSR2N7520T3

-20A JANSF2N7520T3

0.087

Low-Ohmic

TO-257AA

Description

Features

 Single Event Effect (SEE) Hardened

 Fast Switching

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

controllers.

These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Light Weight

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

-20

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-13

-80

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.6

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

134

V_GS

E_AS

I_AR

-20

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-4.9

-55 to + 150

T_STG

°C

300 (0.063 in./1.6 mm from case for 10s)

4.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2017-04-28

12 3 4 5 6 7 8

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与JANSG2N7520U3C相关器件

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JANSH2N2221AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
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JANSH2N2221AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2221AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2222AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSH2N2222AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSH2N2222AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
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