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JANSH2N2221AUB PDF预览

JANSH2N2221AUB

更新时间: 2024-11-22 06:30:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
3页 64K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

JANSH2N2221AUB 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N3针数:4
Reach Compliance Code:compliantECCN代码:3A001.A.1.A
HTS代码:8541.21.00.95风险等级:5.52
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-CDSO-N3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Qualified
参考标准:MIL-19500/255子类别:Other Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):35 ns
Base Number Matches:1

JANSH2N2221AUB 数据手册

 浏览型号JANSH2N2221AUB的Datasheet PDF文件第2页浏览型号JANSH2N2221AUB的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/255  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
JANSF – 300K Rads (Si)  
JANSG – 500K Rads (Si)  
JANSH – 1MEG Rads (Si)  
2N2221A  
2N2222A  
2N2221AL  
2N2221AUA  
2N2221AUB  
2N2221AUBC  
2N2222AL  
2N2222AUA  
2N2222AUB  
2N2222AUBC  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
75  
Vdc  
6.0  
Vdc  
Collector Current  
800  
mAdc  
Total Power Dissipation @ TA = +25°C  
TO-18 (TO-206AA)  
2N2221A, 2N2222A  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
0.5  
PT  
W
0.65  
0.50  
Operating & Storage Junction Temperature Range  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
4 PIN  
2N2221AUA, 2N2222AUA  
Thermal Resistance, Junction-to-Ambient  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
325  
210  
325  
°C/W  
RθJA  
1. Derate linearly 3.08 mW/°C above TA > +37.5°C  
2. Derate linearly 4.76 mW/°C above TA > +63.5°C  
3 PIN  
2N2221AUB, 2N2222AUB  
2N2221AUBC, 2N2222AUBC  
(UBC = Ceramic Lid Version)  
T4-LDS-0042 Rev. 2 (080857)  
Page 1 of 3  

JANSH2N2221AUB 替代型号

型号 品牌 替代类型 描述 数据表
JANSH2N2221AUA MICROSEMI

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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

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