ꢁ
PD - 93791D
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
REF: MIL-PRF-19500/701
TECHNOLOGY
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
5
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHF57034 100K Rads (Si)
IRHF53034 300K Rads (Si)
IRHF54034 500K Rads (Si)
0.048Ω 12A* JANSR2N7492T2
0.048Ω 12A* JANSF2N7492T2
0.048Ω 12A* JANSG2N7492T2
IRHF58034 1000K Rads (Si) 0.060Ω 12A* JANSH2N7492T2
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
Features:
for Single Event Effects (SEE) with useful performance
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Ultra Low RDS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
12*
9.5
48
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
0.2
V
±20
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
270
mJ
A
AS
I
12
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
9.6
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/27/06