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JANSG2N7492T2 PDF预览

JANSG2N7492T2

更新时间: 2024-02-08 03:26:16
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 137K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

JANSG2N7492T2 数据手册

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PD - 93791D  
IRHF57034  
JANSR2N7492T2  
60V, N-CHANNEL  
REF: MIL-PRF-19500/701  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF57034 100K Rads (Si)  
IRHF53034 300K Rads (Si)  
IRHF54034 500K Rads (Si)  
0.04812A* JANSR2N7492T2  
0.04812A* JANSF2N7492T2  
0.04812A* JANSG2N7492T2  
IRHF58034 1000K Rads (Si) 0.06012A* JANSH2N7492T2  
TO-39  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
for Single Event Effects (SEE) with useful performance  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Ultra Low RDS(on)  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
12*  
9.5  
48  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
270  
mJ  
A
AS  
I
12  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
9.6  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 ( 0.063 in./1.6mm from case for 10s)  
0.98 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/27/06  

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