型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSG2N7482T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSG2N7484T3 | INFINEON |
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Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr | |
JANSG2N7491T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSG2N7492T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSG2N7493T2 | INFINEON |
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Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M | |
JANSG2N7494U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSG2N7495U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSG2N7520U3C | INFINEON |
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Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25 | |
JANSH2N2221AL | MICROSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A | |
JANSH2N2221AUA | MICROSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC |