是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 87 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.07 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 72 A | 认证状态: | Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSG2N7491T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSG2N7492T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSG2N7493T2 | INFINEON |
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Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M | |
JANSG2N7494U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSG2N7495U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSG2N7520U3C | INFINEON |
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Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25 | |
JANSH2N2221AL | MICROSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A | |
JANSH2N2221AUA | MICROSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC | |
JANSH2N2221AUB | MICROSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC | |
JANSH2N2221AUBC | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC |