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JANSG2N7495U5

更新时间： 2024-11-21 03:13:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 126K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

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中文翻译

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JANSG2N7495U5 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：CHIP CARRIER, R-CQCC-N15Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
雪崩能效等级（Eas）：87 mJ外壳连接：SOURCE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：11.7 A最大漏源导通电阻：0.08 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CQCC-N15
JESD-609代码：e0元件数量：1
端子数量：15工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：46.8 A
认证状态：Not Qualified参考标准：MIL-19500/700
表面贴装：YES端子面层：TIN LEAD
端子形式：NO LEAD端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

JANSG2N7495U5 数据手册

 浏览型号JANSG2N7495U5的Datasheet PDF文件第2页浏览型号JANSG2N7495U5的Datasheet PDF文件第3页浏览型号JANSG2N7495U5的Datasheet PDF文件第4页浏览型号JANSG2N7495U5的Datasheet PDF文件第5页浏览型号JANSG2N7495U5的Datasheet PDF文件第6页浏览型号JANSG2N7495U5的Datasheet PDF文件第7页 
                                                                             
ꢁ
PD - 94239E  
IRHE57034  
JANSR2N7495U5  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
REF: MIL5-PRF-19500/700  
SURFACE MOUNT (LCC-18)  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHE57034  
IRHE53034  
IRHE54034  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
0.08Ω 11.7A JANSR2N7495U5  
0.08Ω 11.7A JANSF2N7495U5  
0.08Ω 11.7A JANSG2N7495U5  
IRHE58034 1000K Rads (Si)  
0.1Ω  
11.7A JANSH2N7495U5  
LCC-18  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
11.7  
7.4  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
46.8  
25  
DM  
@ T = 25°C  
P
D
W
W/°C  
V
C
0.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
87  
mJ  
A
AS  
I
11.7  
2.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
3.4  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.42 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
04/27/06  
12345678

中文翻译

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JANSH2N72610U INFINEON

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