是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-CDSO-N3 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.1.A |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.5 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.8 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JESD-30 代码: | R-CDSO-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1 W |
认证状态: | Qualified | 参考标准: | MIL-19500/255 |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 35 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSH2N2222AL | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A | |
JANSH2N2222AUA | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC | |
JANSH2N2222AUBC | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC | |
JANSH2N7261 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
JANSH2N72610U | INFINEON |
获取价格 |
8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | |
JANSH2N7261U | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18) | |
JANSH2N7262 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR | |
JANSH2N7262U | ETC |
获取价格 |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package | |
JANSH2N7268 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
JANSH2N7268D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me |