Datasheet > JANSG2N7471T1

JANSG2N7471T1

更新时间： 2023-12-06 19:51:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1134K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 500 krad(Si) TID, QPL

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JANSG2N7471T1 数据手册

IRHMS57160 (JANSR2N7471T1)

Radiation Hardened Power MOSFETThru-Hole (Low-Ohmic TO-254AA)

Table of contents

Features ........................................................................................................................................ 1

Potential Applications..................................................................................................................... 1

Product Validation.......................................................................................................................... 1

Description .................................................................................................................................... 1

Ordering Information...................................................................................................................... 1

Table of contents............................................................................................................................ 2

Absolute Maximum Ratings ..................................................................................................... 3

Device Characteristics ............................................................................................................ 4

Electrical Characteristics (Pre-Irradiation).............................................................................................4

Source-Drain Diode Ratings and Characteristics (Pre-Irradiation) .......................................................5

Thermal Characteristics..........................................................................................................................5

Radiation Characteristics........................................................................................................................5

Electrical Characteristics — Post Total Dose Irradiation ..................................................................5

Single Event Effects — Safe Operating Area......................................................................................6

2.1

2.2

2.3

2.4

2.4.1

2.4.2

Electrical Characteristics Curves (Pre-irradiation) ..................................................................... 7

Test Circuits (Pre-irradiation).................................................................................................10

Package Outline....................................................................................................................11

Revision history.............................................................................................................................12

2 of 13

2022-05-26

123 4 5 6 7...13

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与JANSG2N7471T1相关器件

型号	品牌	描述	获取价格	数据表
JANSG2N7479U3	INFINEON	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
JANSG2N7480U3	INFINEON	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)	获取价格
JANSG2N7481U3	INFINEON	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad	获取价格
JANSG2N7482T3	INFINEON	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)	获取价格
JANSG2N7484T3	INFINEON	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr	获取价格
JANSG2N7491T2	INFINEON	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)	获取价格

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