是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 43 A |
最大漏源导通电阻: | 0.077 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 172 A | 认证状态: | Qualified |
参考标准: | MIL-19500/664 | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSG2N7467U2 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET | |
JANSG2N7469U2 | INFINEON |
获取价格 |
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) | |
JANSG2N7469U2A | INFINEON |
获取价格 |
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 500 | |
JANSG2N7470T1 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
JANSG2N7470T1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me | |
JANSG2N7471T1 | INFINEON |
获取价格 |
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254 | |
JANSG2N7479U3 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
JANSG2N7480U3 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSG2N7481U3 | INFINEON |
获取价格 |
Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad | |
JANSG2N7482T3 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |