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JANSG2N7470T1PBF PDF预览

JANSG2N7470T1PBF

更新时间： 2024-01-11 03:30:13
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 167K
描述
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-254AA, 3 PIN

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中文翻译

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JANSG2N7470T1PBF 技术参数

生命周期：Obsolete零件包装代码：TO-254AA
包装说明：FLANGE MOUNT, S-CSFM-P3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.69雪崩能效等级（Eas）：824 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：45 A
最大漏源导通电阻：0.0066 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-CSFM-P3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：SQUARE封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：180 A
认证状态：Not Qualified参考标准：MIL-19500
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

JANSG2N7470T1PBF 数据手册

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ꢁ
PD-95838C  
IRHMS57064  
JANSR2N7470T1  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
REF: MIL5-PRF-19500/698  
THRU-HOLE (Low-Ohmic TO-254AA)  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1  
IRHMS53064 300K Rads (Si) 0.0066Ω 45A* JANSF2N7470T1  
IRHMS54064 500K Rads (Si) 0.0066Ω 45A* JANSG2N7470T1  
IRHMS58064 1000K Rads (Si) 0.0066Ω 45A* JANSH2N7470T1  
Low-Ohmic  
TO-254AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
45*  
45*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
180  
DM  
@ T = 25°C  
P
D
208  
W
W/°C  
V
C
1.67  
±20  
V
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
824  
mJ  
A
AS  
I
45  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20  
mJ  
V/ns  
AR  
dv/dt  
4.3  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
10/19/11  
12345678

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