Datasheet > JANSG2N7470T1PBF

JANSG2N7470T1PBF

更新时间： 2024-11-05 19:44:27

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	167K
描述
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-254AA, 3 PIN

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JANSG2N7470T1PBF 数据手册

ꢁ

PD-95838C

IRHMS57064

JANSR2N7470T1

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

^{REF: MIL}5^{-PRF-19500/698}

THRU-HOLE (Low-Ohmic TO-254AA)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1

IRHMS53064 300K Rads (Si) 0.0066Ω 45A* JANSF2N7470T1

IRHMS54064 500K Rads (Si) 0.0066Ω 45A* JANSG2N7470T1

IRHMS58064 1000K Rads (Si) 0.0066Ω 45A* JANSH2N7470T1

Low-Ohmic

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

824

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.3

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

10/19/11

12 3 4 5 6 7 8

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与JANSG2N7470T1PBF相关器件

型号	品牌	获取价格	描述	数据表
JANSG2N7471T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
JANSG2N7479U3	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
JANSG2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSG2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad
JANSG2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSG2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr
JANSG2N7491T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7492T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7493T2	INFINEON	获取价格	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M
JANSG2N7494U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

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