Datasheet > JANSG2N7471T1

JANSG2N7471T1

更新时间： 2023-12-06 19:51:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1134K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 500 krad(Si) TID, QPL

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JANSG2N7471T1 数据手册

IRHMS57160 (JANSR2N7471T1)

PD-95889G

Radiation Hardened Power MOSFET

Thru-Hole (Low-Ohmic TO-254AA)

100V, 45A, N-channel, R5 Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 100V

I_D: 45A

R_DS(on),max: 14m

Q_G,max: 160nC

REF: MIL-PRF-19500/698

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

ESD rating: Class 3B per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives

Low-Ohmic TO-254AA

Thermal management

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHMS57160

Ordering options

Package

Screening Level

COTS

TID Level

Low-Ohmic TO-254AA

100 krad(Si)

300 krad(Si)

500 krad(Si)

JANSR2N7471T1

IRHMS53160

JANS

COTS

JANSF2N7471T1

IRHMS54160

JANS

COTS

JANSG2N7471T1

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2022-05-26

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