是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 824 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 45 A |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.0076 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 208 W | 最大脉冲漏极电流 (IDM): | 180 A |
认证状态: | Qualified | 参考标准: | MIL-19500; RH - 500K Rad(Si) |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 120 ns |
最大开启时间(吨): | 160 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSG2N7470T1PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me | |
JANSG2N7471T1 | INFINEON |
获取价格 |
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254 | |
JANSG2N7479U3 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
JANSG2N7480U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSG2N7481U3 | INFINEON |
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Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad | |
JANSG2N7482T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSG2N7484T3 | INFINEON |
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Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr | |
JANSG2N7491T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSG2N7492T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSG2N7493T2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M |