Datasheet > JANSG2N7469U2A

JANSG2N7469U2A

更新时间： 2024-11-22 14:56:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1128K
描述
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 500 krad TID, QPL

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JANSG2N7469U2A 数据手册

PD-97879B

IRHNS57160

JANSR2N7469U2A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

100V, N-CHANNEL

REF: MIL-PRF-19500/673

TECHNOLOGY

Product Summary

Part Number

IRHNS57160

IRHNS53160

IRHNS55160

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7469U2A

JANSF2N7469U2A

JANSG2N7469U2A

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

75A*

0.012

SupIR-SMD

Features

Description

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Fast Switching

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750, Method 1020

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

75*

300

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

250

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.0

V_GS

E_AS

I_AR

±20

363

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

6.0

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2020-04-13

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANSG2N7469U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSG2N7470T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSG2N7470T1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
JANSG2N7471T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
JANSG2N7479U3	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
JANSG2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSG2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad
JANSG2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSG2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 500 kr
JANSG2N7491T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSG2N7492T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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